Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

Duan Bao-Xing; Yang Yin-Tang; Kevin J. Chen

doi:10.7498/aps.61.247302

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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layerJ. Acta Physica Sinica, 2012, 61(24): 247302. DOI: 10.7498/aps.61.247302

Citation:

Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layerJ. Acta Physica Sinica, 2012, 61(24): 247302. DOI: 10.7498/aps.61.247302

Citation:

Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layerJ. Acta Physica Sinica, 2012, 61(24): 247302. DOI: 10.7498/aps.61.247302