Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes

Chen Xin-Long; Zhao Jing; Chang Ben-Kang; Xu Yuan; Zhang Yi-Jun; Jin Mu-Chun; Hao Guang-Hui

doi:10.7498/aps.62.037303

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Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodesJ. Acta Physica Sinica, 2013, 62(3): 037303. DOI: 10.7498/aps.62.037303

Citation:

Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodesJ. Acta Physica Sinica, 2013, 62(3): 037303. DOI: 10.7498/aps.62.037303

Citation:

Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodesJ. Acta Physica Sinica, 2013, 62(3): 037303. DOI: 10.7498/aps.62.037303