Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun. Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature processJ. Acta Physica Sinica, 2013, 62(3): 038803. DOI: 10.7498/aps.62.038803
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Citation:
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Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun. Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature processJ. Acta Physica Sinica, 2013, 62(3): 038803. DOI: 10.7498/aps.62.038803
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Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun. Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature processJ. Acta Physica Sinica, 2013, 62(3): 038803. DOI: 10.7498/aps.62.038803
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Citation:
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Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun. Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature processJ. Acta Physica Sinica, 2013, 62(3): 038803. DOI: 10.7498/aps.62.038803
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