Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Shu Bin, Zhou Chun-Yu, Li Yu-Chen, Lü Yi. Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitorJ. Acta Physica Sinica, 2013, 62(5): 057103. DOI: 10.7498/aps.62.057103
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Citation:
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Shu Bin, Zhou Chun-Yu, Li Yu-Chen, Lü Yi. Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitorJ. Acta Physica Sinica, 2013, 62(5): 057103. DOI: 10.7498/aps.62.057103
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Shu Bin, Zhou Chun-Yu, Li Yu-Chen, Lü Yi. Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitorJ. Acta Physica Sinica, 2013, 62(5): 057103. DOI: 10.7498/aps.62.057103
|
Citation:
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Shu Bin, Zhou Chun-Yu, Li Yu-Chen, Lü Yi. Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitorJ. Acta Physica Sinica, 2013, 62(5): 057103. DOI: 10.7498/aps.62.057103
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