Influences of the multiple electron overtaking on the bunching process of the wide-gap klystron amplifier under high power injection condition

Bai Xian-Chen; Yang Jian-Hua; Zhang Jian-De; Jin Zhen-Xing

doi:10.7498/aps.62.058402

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Bai Xian-Chen, Yang Jian-Hua, Zhang Jian-De, Jin Zhen-Xing. Influences of the multiple electron overtaking on the bunching process of the wide-gap klystron amplifier under high power injection conditionJ. Acta Physica Sinica, 2013, 62(5): 058402. DOI: 10.7498/aps.62.058402

Citation:

Bai Xian-Chen, Yang Jian-Hua, Zhang Jian-De, Jin Zhen-Xing. Influences of the multiple electron overtaking on the bunching process of the wide-gap klystron amplifier under high power injection conditionJ. Acta Physica Sinica, 2013, 62(5): 058402. DOI: 10.7498/aps.62.058402

Citation:

Bai Xian-Chen, Yang Jian-Hua, Zhang Jian-De, Jin Zhen-Xing. Influences of the multiple electron overtaking on the bunching process of the wide-gap klystron amplifier under high power injection conditionJ. Acta Physica Sinica, 2013, 62(5): 058402. DOI: 10.7498/aps.62.058402