Effects of total ionizing dose on narrow-channel SOI NMOSFETs

Ning Bing-Xu; Hu Zhi-Yuan; Zhang Zheng-Xuan; Bi Da-Wei; Huang Hui-Xiang; Dai Ruo-Fan; Zhang Yan-Wei; Zou Shi-Chang

doi:10.7498/aps.62.076104

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Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang. Effects of total ionizing dose on narrow-channel SOI NMOSFETsJ. Acta Physica Sinica, 2013, 62(7): 076104. DOI: 10.7498/aps.62.076104

Citation:

Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang. Effects of total ionizing dose on narrow-channel SOI NMOSFETsJ. Acta Physica Sinica, 2013, 62(7): 076104. DOI: 10.7498/aps.62.076104

Citation:

Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang. Effects of total ionizing dose on narrow-channel SOI NMOSFETsJ. Acta Physica Sinica, 2013, 62(7): 076104. DOI: 10.7498/aps.62.076104