Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate

Liu Zhi; Li Ya-Ming; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming

doi:10.7498/aps.62.076108

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Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrateJ. Acta Physica Sinica, 2013, 62(7): 076108. DOI: 10.7498/aps.62.076108

Citation:

Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrateJ. Acta Physica Sinica, 2013, 62(7): 076108. DOI: 10.7498/aps.62.076108

Citation:

Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrateJ. Acta Physica Sinica, 2013, 62(7): 076108. DOI: 10.7498/aps.62.076108