Physical compact modeling for threshold voltage of strained Si NMOSFET

Zhou Chun-Yu; Zhang He-Ming; Hu Hui-Yong; Zhuang Yi-Qi; Su Bin; Wang Bin; Wang Guan-Yu

doi:10.7498/aps.62.077103

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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(7): 077103. DOI: 10.7498/aps.62.077103

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(7): 077103. DOI: 10.7498/aps.62.077103

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(7): 077103. DOI: 10.7498/aps.62.077103