Effects of bottom electrode on resistive switching characteristics of ZnO films

Li Hong-Xia; Chen Xue-Ping; Chen Qi; Mao Qi-Nan; Xi Jun-Hua; Ji Zhen-Guo

doi:10.7498/aps.62.077202

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Li Hong-Xia, Chen Xue-Ping, Chen Qi, Mao Qi-Nan, Xi Jun-Hua, Ji Zhen-Guo. Effects of bottom electrode on resistive switching characteristics of ZnO filmsJ. Acta Physica Sinica, 2013, 62(7): 077202. DOI: 10.7498/aps.62.077202

Citation:

Li Hong-Xia, Chen Xue-Ping, Chen Qi, Mao Qi-Nan, Xi Jun-Hua, Ji Zhen-Guo. Effects of bottom electrode on resistive switching characteristics of ZnO filmsJ. Acta Physica Sinica, 2013, 62(7): 077202. DOI: 10.7498/aps.62.077202

Citation:

Li Hong-Xia, Chen Xue-Ping, Chen Qi, Mao Qi-Nan, Xi Jun-Hua, Ji Zhen-Guo. Effects of bottom electrode on resistive switching characteristics of ZnO filmsJ. Acta Physica Sinica, 2013, 62(7): 077202. DOI: 10.7498/aps.62.077202