Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2013, 62(7): 077302. DOI: 10.7498/aps.62.077302
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Citation:
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2013, 62(7): 077302. DOI: 10.7498/aps.62.077302
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2013, 62(7): 077302. DOI: 10.7498/aps.62.077302
|
Citation:
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2013, 62(7): 077302. DOI: 10.7498/aps.62.077302
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