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中国物理学会期刊
Wu Yuan-Yuan, Zheng Xin-He, Wang Hai-Xiao, Gan Xing-Yuan, Wen Yu, Wang Nai-Ming, Wang Jian-Feng, Yang Hui. High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaNJ. Acta Physica Sinica, 2013, 62(8): 086101. DOI: 10.7498/aps.62.086101
Citation: Wu Yuan-Yuan, Zheng Xin-He, Wang Hai-Xiao, Gan Xing-Yuan, Wen Yu, Wang Nai-Ming, Wang Jian-Feng, Yang Hui. High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaNJ. Acta Physica Sinica, 2013, 62(8): 086101. DOI: 10.7498/aps.62.086101

High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN

CSTR: 32037.14.aps.62.086101
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