Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2013, 62(10): 108501. DOI: 10.7498/aps.62.108501
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Citation:
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2013, 62(10): 108501. DOI: 10.7498/aps.62.108501
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2013, 62(10): 108501. DOI: 10.7498/aps.62.108501
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Citation:
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2013, 62(10): 108501. DOI: 10.7498/aps.62.108501
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