Search

x
中国物理学会期刊
Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101
Citation: Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101

Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime

CSTR: 32037.14.aps.62.110101
PDF
导出引用
Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return