Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101
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Citation:
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Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101
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Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101
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Citation:
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Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetimeJ. Acta Physica Sinica, 2013, 62(11): 110101. DOI: 10.7498/aps.62.110101
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