Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials

Zhang Bai-Qiang; Zheng Zhong-Shan; Yu Fang; Ning Jin; Tang Hai-Ma; Yang Zhi-An

doi:10.7498/aps.62.117303

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Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materialsJ. Acta Physica Sinica, 2013, 62(11): 117303. DOI: 10.7498/aps.62.117303

Citation:

Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materialsJ. Acta Physica Sinica, 2013, 62(11): 117303. DOI: 10.7498/aps.62.117303

Citation:

Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materialsJ. Acta Physica Sinica, 2013, 62(11): 117303. DOI: 10.7498/aps.62.117303