Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2  dielectrics

Zhu De-Ming; Men Chuan-Ling; Cao Min; Wu Guo-Dong

doi:10.7498/aps.62.117305

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Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong. Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectricsJ. Acta Physica Sinica, 2013, 62(11): 117305. DOI: 10.7498/aps.62.117305

Citation:

Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong. Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectricsJ. Acta Physica Sinica, 2013, 62(11): 117305. DOI: 10.7498/aps.62.117305

Citation:

Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong. Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectricsJ. Acta Physica Sinica, 2013, 62(11): 117305. DOI: 10.7498/aps.62.117305