Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors

Wu Xue; Lu Wu; Wang Xin; Xi Shan-Bin; Guo Qi; Li Yu-Dong

doi:10.7498/aps.62.136101

Search

x

Wu Xue, Lu Wu, Wang Xin, Xi Shan-Bin, Guo Qi, Li Yu-Dong. Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistorsJ. Acta Physica Sinica, 2013, 62(13): 136101. DOI: 10.7498/aps.62.136101

Citation:

Wu Xue, Lu Wu, Wang Xin, Xi Shan-Bin, Guo Qi, Li Yu-Dong. Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistorsJ. Acta Physica Sinica, 2013, 62(13): 136101. DOI: 10.7498/aps.62.136101

Citation:

Wu Xue, Lu Wu, Wang Xin, Xi Shan-Bin, Guo Qi, Li Yu-Dong. Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistorsJ. Acta Physica Sinica, 2013, 62(13): 136101. DOI: 10.7498/aps.62.136101