Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD

Yu Yao; Zhang Jing-Si; Chen Dai-Dai; Guo Rui-Qian; Gu Zhi-Hua

doi:10.7498/aps.62.138501

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Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua. Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVDJ. Acta Physica Sinica, 2013, 62(13): 138501. DOI: 10.7498/aps.62.138501

Citation:

Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua. Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVDJ. Acta Physica Sinica, 2013, 62(13): 138501. DOI: 10.7498/aps.62.138501

Citation:

Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua. Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVDJ. Acta Physica Sinica, 2013, 62(13): 138501. DOI: 10.7498/aps.62.138501