Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory

Ding Li-Li; Guo Hong-Xia; Chen Wei; Yan Yi-Hua; Xiao Yao; Fan Ru-Yu

doi:10.7498/aps.62.188502

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Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memoryJ. Acta Physica Sinica, 2013, 62(18): 188502. DOI: 10.7498/aps.62.188502

Citation:

Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memoryJ. Acta Physica Sinica, 2013, 62(18): 188502. DOI: 10.7498/aps.62.188502

Citation:

Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memoryJ. Acta Physica Sinica, 2013, 62(18): 188502. DOI: 10.7498/aps.62.188502