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Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFETJ. Acta Physica Sinica, 2013, 62(18): 188503. DOI: 10.7498/aps.62.188503
Citation: Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFETJ. Acta Physica Sinica, 2013, 62(18): 188503. DOI: 10.7498/aps.62.188503
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Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET

Acta Phys. Sin., 2013, 62(18): 188503.
DOI: 10.7498/aps.62.188503
CSTR: 32037.14.aps.62.188503
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