Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots

Wang Hong-Pei; Wang Guang-Long; Yu Ying; Xu Ying-Qiang; Ni Hai-Qiao; Niu Zhi-Chuan; Gao Feng-Qi

doi:10.7498/aps.62.207303

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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dotsJ. Acta Physica Sinica, 2013, 62(20): 207303. DOI: 10.7498/aps.62.207303

Citation:

Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dotsJ. Acta Physica Sinica, 2013, 62(20): 207303. DOI: 10.7498/aps.62.207303

Citation:

Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dotsJ. Acta Physica Sinica, 2013, 62(20): 207303. DOI: 10.7498/aps.62.207303