Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy

Zhang Li-Li; Liu Zhan-Hui; Xiu Xiang-Qian; Zhang Rong; Xie Zi-Li

doi:10.7498/aps.62.208101

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Zhang Li-Li, Liu Zhan-Hui, Xiu Xiang-Qian, Zhang Rong, Xie Zi-Li. Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxyJ. Acta Physica Sinica, 2013, 62(20): 208101. DOI: 10.7498/aps.62.208101

Citation:

Zhang Li-Li, Liu Zhan-Hui, Xiu Xiang-Qian, Zhang Rong, Xie Zi-Li. Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxyJ. Acta Physica Sinica, 2013, 62(20): 208101. DOI: 10.7498/aps.62.208101

Citation:

Zhang Li-Li, Liu Zhan-Hui, Xiu Xiang-Qian, Zhang Rong, Xie Zi-Li. Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxyJ. Acta Physica Sinica, 2013, 62(20): 208101. DOI: 10.7498/aps.62.208101