Lü Hou-Xiang, Shi De-Zheng, Xie Zheng-Wei. Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layersJ. Acta Physica Sinica, 2013, 62(20): 208502. DOI: 10.7498/aps.62.208502
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Citation:
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Lü Hou-Xiang, Shi De-Zheng, Xie Zheng-Wei. Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layersJ. Acta Physica Sinica, 2013, 62(20): 208502. DOI: 10.7498/aps.62.208502
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Lü Hou-Xiang, Shi De-Zheng, Xie Zheng-Wei. Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layersJ. Acta Physica Sinica, 2013, 62(20): 208502. DOI: 10.7498/aps.62.208502
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Citation:
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Lü Hou-Xiang, Shi De-Zheng, Xie Zheng-Wei. Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layersJ. Acta Physica Sinica, 2013, 62(20): 208502. DOI: 10.7498/aps.62.208502
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