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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diodeJ. Acta Physica Sinica, 2013, 62(21): 217301. DOI: 10.7498/aps.62.217301
Citation: Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diodeJ. Acta Physica Sinica, 2013, 62(21): 217301. DOI: 10.7498/aps.62.217301
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Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode

Acta Phys. Sin., 2013, 62(21): 217301.
DOI: 10.7498/aps.62.217301
CSTR: 32037.14.aps.62.217301
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