Influence of channel length on PD SOI PMOS devices under total dose irradiation

Liu Hong-Xia; Wang Zhi; Zhuo Qing-Qing; Wang Qian-Qiong

doi:10.7498/aps.63.016102

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Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong. Influence of channel length on PD SOI PMOS devices under total dose irradiationJ. Acta Physica Sinica, 2014, 63(1): 016102. DOI: 10.7498/aps.63.016102

Citation:

Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong. Influence of channel length on PD SOI PMOS devices under total dose irradiationJ. Acta Physica Sinica, 2014, 63(1): 016102. DOI: 10.7498/aps.63.016102

Citation:

Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong. Influence of channel length on PD SOI PMOS devices under total dose irradiationJ. Acta Physica Sinica, 2014, 63(1): 016102. DOI: 10.7498/aps.63.016102