Charge model of strained Si NMOSFET

Zhou Chun-Yu; Zhang He-Ming; Hu Hui-Yong; Zhuang Yi-Qi; Lü Yi; Wang Bin; Wang Guan-Yu

doi:10.7498/aps.63.017101

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu. Charge model of strained Si NMOSFETJ. Acta Physica Sinica, 2014, 63(1): 017101. DOI: 10.7498/aps.63.017101

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu. Charge model of strained Si NMOSFETJ. Acta Physica Sinica, 2014, 63(1): 017101. DOI: 10.7498/aps.63.017101

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu. Charge model of strained Si NMOSFETJ. Acta Physica Sinica, 2014, 63(1): 017101. DOI: 10.7498/aps.63.017101