A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate

Shi Yan-Mei; Liu Ji-Zhi; Yao Su-Ying; Ding Yan-Hong

doi:10.7498/aps.63.107302

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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong. A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plateJ. Acta Physica Sinica, 2014, 63(10): 107302. DOI: 10.7498/aps.63.107302

Citation:

Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong. A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plateJ. Acta Physica Sinica, 2014, 63(10): 107302. DOI: 10.7498/aps.63.107302

Citation:

Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong. A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plateJ. Acta Physica Sinica, 2014, 63(10): 107302. DOI: 10.7498/aps.63.107302