The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors

Ma Wu-Ying; Wang Zhi-Kuan; Lu Wu; Xi Shan-Bin; Guo Qi; He Cheng-Fa; Wang Xin; Liu Mo-Han; Jiang Ke

doi:10.7498/aps.63.116101

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Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistorsJ. Acta Physica Sinica, 2014, 63(11): 116101. DOI: 10.7498/aps.63.116101

Citation:

Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistorsJ. Acta Physica Sinica, 2014, 63(11): 116101. DOI: 10.7498/aps.63.116101

Citation:

Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistorsJ. Acta Physica Sinica, 2014, 63(11): 116101. DOI: 10.7498/aps.63.116101