Preparation of GaN nanowires by nonammonia method and their photoelectronic properties

Zhao Jun-Wei; Zhang Yue-Fei; Song Xue-Mei; Yan Hui; Wang Ru-Zhi

doi:10.7498/aps.63.117702

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Zhao Jun-Wei, Zhang Yue-Fei, Song Xue-Mei, Yan Hui, Wang Ru-Zhi. Preparation of GaN nanowires by nonammonia method and their photoelectronic propertiesJ. Acta Physica Sinica, 2014, 63(11): 117702. DOI: 10.7498/aps.63.117702

Citation:

Zhao Jun-Wei, Zhang Yue-Fei, Song Xue-Mei, Yan Hui, Wang Ru-Zhi. Preparation of GaN nanowires by nonammonia method and their photoelectronic propertiesJ. Acta Physica Sinica, 2014, 63(11): 117702. DOI: 10.7498/aps.63.117702

Citation:

Zhao Jun-Wei, Zhang Yue-Fei, Song Xue-Mei, Yan Hui, Wang Ru-Zhi. Preparation of GaN nanowires by nonammonia method and their photoelectronic propertiesJ. Acta Physica Sinica, 2014, 63(11): 117702. DOI: 10.7498/aps.63.117702