First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory

Dai Guang-Zhen; Dai Yue-Hua; Xu Tai-Long; Wang Jia-Yu; Zhao Yuan-Yang; Chen Jun-Ning; Liu Qi

doi:10.7498/aps.63.123101

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Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memoryJ. Acta Physica Sinica, 2014, 63(12): 123101. DOI: 10.7498/aps.63.123101

Citation:

Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memoryJ. Acta Physica Sinica, 2014, 63(12): 123101. DOI: 10.7498/aps.63.123101

Citation:

Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memoryJ. Acta Physica Sinica, 2014, 63(12): 123101. DOI: 10.7498/aps.63.123101