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中国物理学会期刊
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Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity siliconJ. Acta Physica Sinica, 2014, 63(13): 136803. DOI: 10.7498/aps.63.136803
Citation: Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity siliconJ. Acta Physica Sinica, 2014, 63(13): 136803. DOI: 10.7498/aps.63.136803
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Influence of high dose As ion implantation on electrical properties of high resistivity silicon

Acta Phys. Sin., 2014, 63(13): 136803.
DOI: 10.7498/aps.63.136803
CSTR: 32037.14.aps.63.136803
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