Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs

Xin Yan-Hui; Liu Hong-Xia; Wang Shu-Long; Fan Xiao-Jiao

doi:10.7498/aps.63.148502

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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETsJ. Acta Physica Sinica, 2014, 63(14): 148502. DOI: 10.7498/aps.63.148502

Citation:

Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETsJ. Acta Physica Sinica, 2014, 63(14): 148502. DOI: 10.7498/aps.63.148502

Citation:

Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETsJ. Acta Physica Sinica, 2014, 63(14): 148502. DOI: 10.7498/aps.63.148502