Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change

Liu Bin-Li; Tang Yong; Luo Yi-Fei; Liu De-Zhi; Wang Rui-Tian; Wang Bo

doi:10.7498/aps.63.177201

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Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage changeJ. Acta Physica Sinica, 2014, 63(17): 177201. DOI: 10.7498/aps.63.177201

Citation:

Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage changeJ. Acta Physica Sinica, 2014, 63(17): 177201. DOI: 10.7498/aps.63.177201

Citation:

Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage changeJ. Acta Physica Sinica, 2014, 63(17): 177201. DOI: 10.7498/aps.63.177201