Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET

Yang Shuai; Tang Xiao-Yan; Zhang Yu-Ming; Song Qing-Wen; Zhang Yi-Men

doi:10.7498/aps.63.208501

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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFETJ. Acta Physica Sinica, 2014, 63(20): 208501. DOI: 10.7498/aps.63.208501

Citation:

Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFETJ. Acta Physica Sinica, 2014, 63(20): 208501. DOI: 10.7498/aps.63.208501

Citation:

Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFETJ. Acta Physica Sinica, 2014, 63(20): 208501. DOI: 10.7498/aps.63.208501