Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor

Wang Xin; Lu Wu; Wu Xue; Ma Wu-Ying; Cui Jiang-Wei; Liu Mo-Han; Jiang Ke

doi:10.7498/aps.63.226101

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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistorJ. Acta Physica Sinica, 2014, 63(22): 226101. DOI: 10.7498/aps.63.226101

Citation:

Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistorJ. Acta Physica Sinica, 2014, 63(22): 226101. DOI: 10.7498/aps.63.226101

Citation:

Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistorJ. Acta Physica Sinica, 2014, 63(22): 226101. DOI: 10.7498/aps.63.226101