Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltageJ. Acta Physica Sinica, 2014, 63(23): 237302. DOI: 10.7498/aps.63.237302
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Citation:
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltageJ. Acta Physica Sinica, 2014, 63(23): 237302. DOI: 10.7498/aps.63.237302
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltageJ. Acta Physica Sinica, 2014, 63(23): 237302. DOI: 10.7498/aps.63.237302
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Citation:
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltageJ. Acta Physica Sinica, 2014, 63(23): 237302. DOI: 10.7498/aps.63.237302
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