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中国物理学会期刊
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304
Citation: Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304

Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

CSTR: 32037.14.aps.63.237304
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