Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304
|
Citation:
|
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304
|
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304
|
Citation:
|
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2014, 63(23): 237304. DOI: 10.7498/aps.63.237304
|