A dual-trench silicon on insulator high voltage device with an L-shaped source field plate

Shi Yan-Mei; Liu Ji-Zhi; Yao Su-Ying; Ding Yan-Hong; Zhang Wei-Hua; Dai Hong-Li

doi:10.7498/aps.63.237305

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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plateJ. Acta Physica Sinica, 2014, 63(23): 237305. DOI: 10.7498/aps.63.237305

Citation:

Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plateJ. Acta Physica Sinica, 2014, 63(23): 237305. DOI: 10.7498/aps.63.237305

Citation:

Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plateJ. Acta Physica Sinica, 2014, 63(23): 237305. DOI: 10.7498/aps.63.237305