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中国物理学会期刊
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Liu Wei-Feng, Song Jian-Jun. Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductorJ. Acta Physica Sinica, 2014, 63(23): 238501. DOI: 10.7498/aps.63.238501
Citation: Liu Wei-Feng, Song Jian-Jun. Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductorJ. Acta Physica Sinica, 2014, 63(23): 238501. DOI: 10.7498/aps.63.238501
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Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor

Acta Phys. Sin., 2014, 63(23): 238501.
DOI: 10.7498/aps.63.238501
CSTR: 32037.14.aps.63.238501
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