Study on intrinsic carrier concentration of direct bandgap Ge1-xSnx

Bai Min; Xuan Rong-Xi; Song Jian-Jun; Zhang He-Ming; Hu Hui-Yong; Shu Bin

doi:10.7498/aps.63.238502

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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Study on intrinsic carrier concentration of direct bandgap Ge1-xSnxJ. Acta Physica Sinica, 2014, 63(23): 238502. DOI: 10.7498/aps.63.238502

Citation:

Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Study on intrinsic carrier concentration of direct bandgap Ge1-xSnxJ. Acta Physica Sinica, 2014, 63(23): 238502. DOI: 10.7498/aps.63.238502

Citation:

Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Study on intrinsic carrier concentration of direct bandgap Ge1-xSnxJ. Acta Physica Sinica, 2014, 63(23): 238502. DOI: 10.7498/aps.63.238502