Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor

Zhang Jin-Xin; He Chao-Hui; Guo Hong-Xia; Tang Du; Xiong Cen; Li Pei; Wang Xin

doi:10.7498/aps.63.248503

Search

x

Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2014, 63(24): 248503. DOI: 10.7498/aps.63.248503

Citation:

Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2014, 63(24): 248503. DOI: 10.7498/aps.63.248503

Citation:

Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2014, 63(24): 248503. DOI: 10.7498/aps.63.248503