Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun. Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memoryJ. Acta Physica Sinica, 2015, 64(1): 016103. DOI: 10.7498/aps.64.016103
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Citation:
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun. Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memoryJ. Acta Physica Sinica, 2015, 64(1): 016103. DOI: 10.7498/aps.64.016103
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun. Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memoryJ. Acta Physica Sinica, 2015, 64(1): 016103. DOI: 10.7498/aps.64.016103
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Citation:
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun. Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memoryJ. Acta Physica Sinica, 2015, 64(1): 016103. DOI: 10.7498/aps.64.016103
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