Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diodeJ. Acta Physica Sinica, 2015, 64(1): 017303. DOI: 10.7498/aps.64.017303
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Citation:
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Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diodeJ. Acta Physica Sinica, 2015, 64(1): 017303. DOI: 10.7498/aps.64.017303
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Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diodeJ. Acta Physica Sinica, 2015, 64(1): 017303. DOI: 10.7498/aps.64.017303
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Citation:
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Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diodeJ. Acta Physica Sinica, 2015, 64(1): 017303. DOI: 10.7498/aps.64.017303
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