Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2015, 64(11): 118502. DOI: 10.7498/aps.64.118502
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Citation:
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2015, 64(11): 118502. DOI: 10.7498/aps.64.118502
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2015, 64(11): 118502. DOI: 10.7498/aps.64.118502
|
Citation:
|
Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2015, 64(11): 118502. DOI: 10.7498/aps.64.118502
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