Zhao Xing, Mei Bo, Bi Jin-Shun, Zheng Zhong-Shan, Gao Lin-Chun, Zeng Chuan-Bin, Luo Jia-Jun, Yu Fang, Han Zheng-Sheng. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuitJ. Acta Physica Sinica, 2015, 64(13): 136102. DOI: 10.7498/aps.64.136102
|
Citation:
|
Zhao Xing, Mei Bo, Bi Jin-Shun, Zheng Zhong-Shan, Gao Lin-Chun, Zeng Chuan-Bin, Luo Jia-Jun, Yu Fang, Han Zheng-Sheng. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuitJ. Acta Physica Sinica, 2015, 64(13): 136102. DOI: 10.7498/aps.64.136102
|
Zhao Xing, Mei Bo, Bi Jin-Shun, Zheng Zhong-Shan, Gao Lin-Chun, Zeng Chuan-Bin, Luo Jia-Jun, Yu Fang, Han Zheng-Sheng. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuitJ. Acta Physica Sinica, 2015, 64(13): 136102. DOI: 10.7498/aps.64.136102
|
Citation:
|
Zhao Xing, Mei Bo, Bi Jin-Shun, Zheng Zhong-Shan, Gao Lin-Chun, Zeng Chuan-Bin, Luo Jia-Jun, Yu Fang, Han Zheng-Sheng. Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuitJ. Acta Physica Sinica, 2015, 64(13): 136102. DOI: 10.7498/aps.64.136102
|