Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model

Zhao Qi-Feng; Zhuang Yi-Qi; Bao Jun-Lin; Hu Wei

doi:10.7498/aps.64.136104

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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise modelJ. Acta Physica Sinica, 2015, 64(13): 136104. DOI: 10.7498/aps.64.136104

Citation:

Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise modelJ. Acta Physica Sinica, 2015, 64(13): 136104. DOI: 10.7498/aps.64.136104

Citation:

Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise modelJ. Acta Physica Sinica, 2015, 64(13): 136104. DOI: 10.7498/aps.64.136104