Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer

Zhang Chao-Yu; Xiong Chuan-Bing; Tang Ying-Wen; Huang Bin-Bin; Huang Ji-Feng; Wang Guang-Xu; Liu Jun-Lin; Jiang Feng-Yi

doi:10.7498/aps.64.187801

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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layerJ. Acta Physica Sinica, 2015, 64(18): 187801. DOI: 10.7498/aps.64.187801

Citation:

Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layerJ. Acta Physica Sinica, 2015, 64(18): 187801. DOI: 10.7498/aps.64.187801

Citation:

Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layerJ. Acta Physica Sinica, 2015, 64(18): 187801. DOI: 10.7498/aps.64.187801