Acoustic charge transport behaviors of sulfur-doped wide gap Ga2Te3-based semiconductors

Liu Hai-Yun; Liu Xiang-Lian; Tian Ding-Qi; Du Zheng-Liang; Cui Jiao-Lin

doi:10.7498/aps.64.197201

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Liu Hai-Yun, Liu Xiang-Lian, Tian Ding-Qi, Du Zheng-Liang, Cui Jiao-Lin. Acoustic charge transport behaviors of sulfur-doped wide gap Ga2Te3-based semiconductorsJ. Acta Physica Sinica, 2015, 64(19): 197201. DOI: 10.7498/aps.64.197201

Citation:

Liu Hai-Yun, Liu Xiang-Lian, Tian Ding-Qi, Du Zheng-Liang, Cui Jiao-Lin. Acoustic charge transport behaviors of sulfur-doped wide gap Ga2Te3-based semiconductorsJ. Acta Physica Sinica, 2015, 64(19): 197201. DOI: 10.7498/aps.64.197201

Citation:

Liu Hai-Yun, Liu Xiang-Lian, Tian Ding-Qi, Du Zheng-Liang, Cui Jiao-Lin. Acoustic charge transport behaviors of sulfur-doped wide gap Ga2Te3-based semiconductorsJ. Acta Physica Sinica, 2015, 64(19): 197201. DOI: 10.7498/aps.64.197201