A Model of channel current for uniaxially strained Si NMOSFET

Lü Yi; Zhang He-Ming; Hu Hui-Yong; Yang Jin-Yong; Yin Shu-Juan; Zhou Chun-Yu

doi:10.7498/aps.64.197301

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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFETJ. Acta Physica Sinica, 2015, 64(19): 197301. DOI: 10.7498/aps.64.197301

Citation:

Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFETJ. Acta Physica Sinica, 2015, 64(19): 197301. DOI: 10.7498/aps.64.197301

Citation:

Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFETJ. Acta Physica Sinica, 2015, 64(19): 197301. DOI: 10.7498/aps.64.197301