An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing. Research progress of high mobility germanium based metal oxide semiconductor devicesJ. Acta Physica Sinica, 2015, 64(20): 208501. DOI: 10.7498/aps.64.208501
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Citation:
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An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing. Research progress of high mobility germanium based metal oxide semiconductor devicesJ. Acta Physica Sinica, 2015, 64(20): 208501. DOI: 10.7498/aps.64.208501
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An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing. Research progress of high mobility germanium based metal oxide semiconductor devicesJ. Acta Physica Sinica, 2015, 64(20): 208501. DOI: 10.7498/aps.64.208501
|
Citation:
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An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing. Research progress of high mobility germanium based metal oxide semiconductor devicesJ. Acta Physica Sinica, 2015, 64(20): 208501. DOI: 10.7498/aps.64.208501
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