Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin filmJ. Acta Physica Sinica, 2015, 64(23): 238502. DOI: 10.7498/aps.64.238502
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Citation:
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Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin filmJ. Acta Physica Sinica, 2015, 64(23): 238502. DOI: 10.7498/aps.64.238502
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Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin filmJ. Acta Physica Sinica, 2015, 64(23): 238502. DOI: 10.7498/aps.64.238502
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Citation:
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Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin filmJ. Acta Physica Sinica, 2015, 64(23): 238502. DOI: 10.7498/aps.64.238502
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